diemilio
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Hello everyone.
most of the tech files I have work with have a N well layer, an N+ diffusion layer, P+ diffusion layer, POLY layers and METAL layers. So, for instance, if you wanted to create a NMOS you just had to place the POLY diffusion over the N+ diffusion (since the substrate was the working space). Now I'm working with a tech file which, not only has PPLUS and NPLUS layer, but it also has a layer called DIFF. I some examples I have seen, to create a NMOS you have to place not only the POLY over the NPLUS layer, but also you have to include the DIFF (see attached pic)!!
I don't understand why!! Is this related to some kind of fabrication procedure???
Thanks for your help,
diemilio
most of the tech files I have work with have a N well layer, an N+ diffusion layer, P+ diffusion layer, POLY layers and METAL layers. So, for instance, if you wanted to create a NMOS you just had to place the POLY diffusion over the N+ diffusion (since the substrate was the working space). Now I'm working with a tech file which, not only has PPLUS and NPLUS layer, but it also has a layer called DIFF. I some examples I have seen, to create a NMOS you have to place not only the POLY over the NPLUS layer, but also you have to include the DIFF (see attached pic)!!
I don't understand why!! Is this related to some kind of fabrication procedure???
Thanks for your help,
diemilio