Process Information for 0.18um

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faraday_3

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cmos process parameters 0.18um

Can anyone please tell me the following parameters for CMOS 0.18um process?
For nMOS and pMOS:
- KP (for beta=KP*W/L in uA/V^2)
- Vth

I am using TSMC 0.18um. I also looked for them in the documents provided by TSMC without any luck

Regards,

Faraday.
 

kp values for tsmc 0.18um


Hi,
MOSIS has process specification data for TSMC 0.18 um for each run.

Here is the link :

**broken link removed**

Click on any of the runs to get the values that you want.

Bharath
 

tsmc process specification 0.18

I have worked on TSMC 0.18u process following are the values u required :

Kn is between 182u to 225u (ss to ff)
Kp is between 54u to 65u (ss to ff)

Vthn = 0.68V to 0.88V (ff to ss)
Vthp = -0.6V to -0.8V (ff to ss)

all the parameters for 3.3V device.
 

Uo of NMOS is about 0.0459 m^2/Vs
Uo of PMOS is about 0.0109 m^2/Vs
vthn is about 0.445 (TT)
vthp is about -0.438 (TT)
for 1.8v MOSs
 

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    faraday_3

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Dear zhancangF117 :

Differencel circuit has difference value,
When you know the range of these parameter,
you need to calcuate them again for your design.


Regards,
mpig09
 

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