Dear all experts,
I am designing a power switch that can switch between VDDA_IN(direct power supply, 1.8V-3.3V) and VBAT(battery power, 1.8V-3.3V).
My problem is that the switch of VBAT cannot completely turn off if VDDA_IN is higher than VBAT (as below picture).
You are posting in the IC design section. This implies that transistor bulk nodes must be considered, please show a complete schematic. If P2 bulk is isolated or at highest positive potential, it's sufficient to raise P2 gate voltage to 3.3 V to avoid back current to VBAT.
You are posting in the IC design section. This implies that transistor bulk nodes must be considered, please show a complete schematic. If P2 bulk is isolated or at highest positive potential, it's sufficient to raise P2 gate voltage to 3.3 V to avoid back current to VBAT.
To simplify the discussion, let's temporarily ignore the bulk connection. Based on your advice, we need to determine the maximum voltage of VDDA_IN and VBAT at the gate of P2.
What would be the best approach to achieve this? Would designing a comparator be necessary?
Dear all experts,
I am designing a power switch that can switch between VDDA_IN(direct power supply, 1.8V-3.3V) and VBAT(battery power, 1.8V-3.3V).
My problem is that the switch of VBAT cannot completely turn off if VDDA_IN is higher than VBAT (as below picture). View attachment 198530
mosfet is symetrica element from both sides of S&D. remove the sign of triangle from S terminal and analyse your circuit in unwanted condition, then you will find the answer!