Dear All:
I am designing a conventional integer-N PLL in 40nm CMOS. In LC-VCO part the varactor is implemented by the thin oxide accumulated-mode MOS. When the PLL toward locked, the average current of charge pump output is nearly zero (nA level). However, I observe that the control line (Vctrl) of VCO keeps increasing steadily, though it is slow. I suspect it could be due to the leakage of thin oxide varactor. To verify, I simulate a standalone VCO with Vctrl connected to a resistor in serial of a capacitor. The initial value of cap is 0.6V. After free running of 2us, the voltage of cap increases as well. Could someone share experience about this? I am running another version using thick oxide but it takes time to simulate. What is normally the way to implement the varactor in LC-VCO?
Thanks and regards,