PIN Photodiode for SIlvaco TCAD

SIlvaco TCAD (IC Design)

Hye, how to insert concentration of In57Ga43As in PIN Photodiode.

this is how i declare the materials that i use in my design. by using this source code, i get IV Characteristic

material region num=1 y.min=0 y.max=10 InP
material region num=2 y.min=10 y.max=15 InGaAs
material region num=3 y.min=15 y.max=20 InP

than, i try to change the concentration of InGaAs like this:

material region num=1 y.min=0 y.max=10 InP
material region num=2 y.min=10 y.max=15 In57Ga43As
material region num=3 y.min=15 y.max=20 InP

and i notice that the IV Characteristics is the same like the 1st source code that i use. is it correct how i write the 2nd coding for InGaAs? or there is another way to insert the concentration of InGaAs? thanks

Hi, are you Chinese? If you are, we can tell you very sample. In57Ga43As =InGaAs. You can try the "doping". I hope it will uesfull for you.

hye bhyangtze, yes. can u explain to me? thanks

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hye bhyangtze, yes. can u explain to me? thanks