P-Well CMOS Procees SPICE Parameters

[tarook79]

Hi,
I am currently working on designing a circuit that has to be implemented using P-Well CMOS process.
Does anyone have SPICE parameters of the transistors for such process for technology of 0.5 micron or below ?

 

[jake]

here it is, csmc05
.model NVP PMOS
+level = 49
*
* GENERAL PARAMETERS
*
+lmin = 5.5e-7 lmax = 2.0e-5 wmin = 6.0e-7 wmax = 2.0e-5
+tref = 27.0
+version = 3.2
+tox = '1.27E-08+toxpn'
+toxm = 1.27e-08
+xj = 2.0000000e-07
+nch = 3.9211000e+16
+lln = 0.1718000
+lwn = 1.0000000
+wln = 0.9096138
+wwn = 1.9640454
+lint = -2.9392644e-10
+ll = 4.8657780e-09
+lw = 0.00
+lwl = 3.2949680e-16
+wint = 1.5321000e-07
+wl = -3.1177917e-14
+ww = -3.5282190e-20
+wwl = 0.00
+mobmod = 1
+binunit = 2
+xl = '0.00E+00+xlpn'
+xw = '0.00E+00+xwpn'
+lmlt = 1
+wmlt = 1
+binflag = 0
+dwg = -7.5196240e-09
+dwb = -8.8500040e-10
* NOISE MODEL PARAMETERS
+noimod= 2
+NoiA= 8.03959410758594E+18
+NoiB= 22750
+NoiC= 0.00000000000324
+Ef= 1.204
+Em= 1840676.27288843
* DIODE PARAMETERS
+acm = 2
+ldif = 0.00
+hdif = 6.00e-07
+rsh = 169
+rd = 0
+rs = 0
+rsc = 0
+rdc = 0
*
* THRESHOLD VOLTAGE PARAMETERS
*
+vth0 = '-9.73E-01+vthpn'
+k1 = 0.4109161
+k2 = 1.9222172e-02 lk2 = -3.4000000e-08
+k3 = 4.7544390
+dvt0 = 1.9507611
+dvt1 = 0.9552611
+dvt2 = 0.2375000
+dvt0w = 1.5924101
+dvt1w = 1.6596450e+06
+dvt2w = 2.0000000e-02
+nlx = 9.4674930e-09
+w0 = -4.4366630e-09
+k3b = -1.7572563
+ngate = 1.0000000e+30
+vfb = -0.1524965
*
* MOBILITY PARAMETERS
*
+vsat = 1.1421400e+05 pvsat = 2.8353107e-09
+ua = 4.2156900e-09 pua = -5.7302530e-23
+ub = -6.2567930e-19
+uc = -6.5204860e-11
+rdsw = 7.5183910e+02
+prwb = -0.1286000
+prwg = 1.5611597e-02
+wr = 0.9781416
+u0 = 2.5887955e-02
+a0 = 0.9554556
+keta = -1.3701160e-02
+a1 = 0.00
+a2 = 0.4000000
+ags = 0.1720220 lags = 2.2507542e-07
+b0 = 6.5099060e-07
+b1 = 1.4520109e-06
*
* SUBTHRESHOLD CURRENT PARAMETERS
*
+voff = -9.9300000e-02
+nfactor = 0.8502510
+cit = 2.4700000e-09
+cdsc = 9.0727240e-06
+cdscb = -1.5753420e-05
+cdscd = 1.2948903e-03
+eta0 = 0.3668273
+etab = -4.1721060e-03
+dsub = 0.7021100
*
* ROUT PARAMETERS
*
+pclm = 2.7501225
+pdiblc1 = 1.0000000e-05
+pdiblc2 = 7.5469860e-03
+pdiblcb = -0.1250000
+drout = 3.0000000
+pscbe1 = 5.0336000e+08
+pscbe2 = 4.5000000e-07
+pvag = 1.0000000
+delta = 1.0000000e-02
+alpha0 = 0.00
+alpha1 = 0.00
+beta0 = 30.0000000
*
* TEMPERATURE EFFECTS PARAMETERS
*
+kt1= -0.5000000
+kt2= -5.7841390E-02
+At= 1.1792727E+02
+Ute= -1.4499991
+Ua1= 2.5594273E-09
+Ub1= -8.0262190E-18
+Uc1= 4.5520970E-11
+Kt1l= 8.9438480E-09
+Prt= -8.2061230E+02
*
* CAPACITANCE PARAMETERS
*
+cj = '9.27E-04+cjpn'
+mj = 0.3928
+pb = 0.7557
+cjsw = '3.02E-10+cjswpn'
+mjsw = 0.1841
+php = 0.5105
+cjgate = '5.0301e-10+cjgatepn'
+tpb = 0.0022064
+tpbsw = 9.7723e-04
+tcj = 7.3374e-04
+tcjsw = -7.2026e-04
+js = 1.00e-04
+jsw = 0.00
+n = 1.0
+xti = 3.0
+cgdo = '3.49E-10+cgdopn'
+cgso = '3.49E-10+cgsopn'
+cgbo = 1.0e-13
+capmod = 2
+nqsmod = 0
+elm = 5
+xpart = 0
+cgsl = -2.4300000e-17
+cgdl = -2.4300000e-17
+ckappa = 0.6000000
+cf = 0.00
+clc = 5.0000000e-12
+cle = 2.3309000
+dlc = -2.43e-17
+dwc = -2.43e-17
+vfbcv = -0.0871
+llc = 0
+lwc = 0
+wlc = 0
+wwc = 0
+lwlc = 0
+wwlc = 0
+moin = 15
+noff = 1
+voffcv = 0

 

[tarook79]

Hi,
The parameters you posted are for PMOS transistor.
Do you have the parameters of NMOS transistor in a P-Well process as well ?