Q4 is Q pt is determined by solely due to low impedance thru
Vbe of both Q9,Q11 which is defined solely due to the fact that when Vin=0 and R2 reference is GND , the output MUST be zero.
Since R17 is 517 Ω, Vbe will be 517 mV minimum voltage with bias current is my guess.
The 10mA stage 2 bias current is determined by Q6-Ic and Rbe=62Ohms. If Q4-Ic is 10mA then Q6-Ic will be a maximum of 10% of this or 1mA and then Q6-Ib will be a maximum of 10% of Ic which is 100uA which generates 620 mV across Vbe and thus Ic= 630mV /62R= 10 mA.
So what is the output stage bias current? I can see the value of R7/R8 ratio controls it , now how to explain it?
When any normal transistor saturates fully we expect the spec lists a current gain of 10 or Ic/Ib=10.
All datasheets confirm this in the tables and the VI curves for moderate currents around 5A.
We know the output stage can drive AT LEAST 10mA*10*10= 1A when saturated and much more when not saturated.
Now looking closer at the VI curves... calculate the incremental slope of ΔV/ΔI near saturation. Diodes Inc calls it Rce [mΩ] on their patented devices, others call it incremental saturation resistance.
I prefer to call this.. ESR for collector saturation . Both NPN-PNP final stage can supply 5A at Vce=5V with hFE=35 but this drops sharply at 10A then hFE drops to 10 at 20A. but at 5V/5A @25'C, the ESR appears to be in Fig 7&8 for ΔIc=20A , ΔVce=1V, thus ESR= 50 mΩ so adding 330 mΩ after each emitter stabilizes the voltage bias between the collectors of stage 2 to protects he final stage in from minor Vbe variations which can lead to "thermal runaway" where bias increases current and Vbe drops and I bias increases. Vce rises out out saturation current gain increases and Pd melts the solder joints.
So what is the voltage of 2nd stage high side collector? Well its defined by the Vbe drops of 2 cascaded complementary Darlingtons. If Vbe-0.5V the Collector to Collector V drop is 2V and at this point we want Vbe on Q5 to also be 0.5V thus with 10mA and 518 Ω we get 518mA as the designer's choice for minimal output bias current , which you may calcuate in your leisure.
This is ok for small input signals but it the input is large such that the 2nd stage will try to saturate.
With Vin=0 the voltage drop across R8(1200 Ω)+R7(512 Ω) with 10mA is 1712 Ω*0.01 A= 17.1V shared by both complementary collectors. So it was designed for 35V dual supplies for large signal output.
But wait a minute, if Q5 starts to turn off and the stage 2 differential voltage across R7+R8 with 10 mA would rise to was 17V with 1.2k+518 Ω gives 1.7kx10mA= 17V !!
So we see when the output stage becomes starved for bias current the voltage gain of stage 2 rises to 78 with 17V across Q5-Vce and this is when all the 10mA goes into the Darlington stages and the device has maximum hfe with Vce far away from saturation.
In general this is a a low voltage gain Class A-B power amp but when the output stage becomes starved for current due to any condition such as a motor or woofer back EMF, the voltage gain rises to increase bias current to maintain excellent load regulation of the voltage, adequate gain for a nominal gain of 20. But we can see that the voltage swing can change the lower the gain dynamically. The minimum gain depends solely on the impedance of Q5 which is dynamically control by output stage bias current . I would estimate Q5_Rb as 359Ω and its collector emitter impedance divided by saturated current gain of 10 so this value divided by emitter R gives the stage 2 minimum gain of approx. 36 Ω /22 Ω = 1.6 so the dynamic voltage gain is reasonably effective at keeping Ie on the output stage slightly higher than the load current.
.... Making it a very efficient and stable Class A-B potential 250W+ RMS power Amp. with suitable thermal design. with only +/-35V supply.