After transient post layout simulations on a comparator i have noticed that an offset voltage of 50mv exists, which is not visible in schematic level.
It is strange since the layout is symmetrical, and any offset should arrise from mismatches between the transistors. However during any transient post layout simulation noo mismatches are included (only in Monte Carlo analysis).
The offset was due to parasitic capacitance of two internal nodes of the comparator with the VDD and GND lines which was 0.5um left and rigth of the circuit. The parasitic capacitances was almost 1fF !!!
It seems that analog design becomes realy hard in submicron technologies (90nm)
After transient post layout simulations on a comparator i have noticed that an offset voltage of 50mv exists, which is not visible in schematic level.
It is strange since the layout is symmetrical, and any offset should arrise from mismatches between the transistors. However during any transient post layout simulation noo mismatches are included (only in Monte Carlo analysis).
Generally the problem is due to the drop on the critical nets.So if u increase the routing widths of the critical nets like the connections to the current mirrors, diff pairs,VDD lines and the output nets.Also the placement of the pins matters.If u make this changes to ur layout i think u can come out of the problem.