heres what i found going through cadence Fourms :
For a MOS transistor, the individual noise contributors are
fn, id, rs and rd.
-fn is the flicker noise
-id is the drain-source resistance thermal noise
-rs is the source parasitic thermal noise
-rd is the drain parasitic resistance thermal noise
For Bipolar transistor,
the noise contributors are in rb, ib, rc, ic, fn, re, and bn.
-rb is the base resistance thermal noise
-ib is the base current shot noise
-rc is the collector resistor thermal noise
-ic is the collector current shot noise
-fn is the flicker noise
-re is the emitter resistor thermal noise
-bn is the burst noise
Also,
-itfz is forward transport current
-ibe(A) Intrinisic B-E Junction Current
-kfn is B-E flicker noise constant
-afn is the B-E flicker niose exponent
-bfn is the B-E flicker noise dependence
I know this is a pretty old thread, but it might help someone later on.
Cheers