NMOS Transister problem

[yorky]

Consider an NMOS transistor fabricated in a 0.18um process with L= 0.18um and W = 2um. The proces technology is specified to have Cox = 8.6fF/um^2, un = 450cm^2/v*s, and Vth = 0.5v.
a. Find VGS and VDS that Result in the MOSFET operating at the edge of saturation with Id = 100uA.
b. if VGS is kept constant, find VDS that results in Id = 50 uA.

I do not know if I have enough info in order to do this problem some help on how to solve it would be appreciated. Btw this is all the info in the problem.

 

[A.Anand Srinivasan]

Yep. You've enough info on this. At edge of saturation general assumption is VGS = VDS. Use this in the Id formula find VGS and VDS. Then use that value and find VDS for the next calculation.

 

[yorky]

using this formula?

 

[A.Anand Srinivasan]

Yep... ...