I need to bias the transistor. I am trying to first find the gate-to-source voltage with the drain current equation. Then I'm stuck. Do I choose source and drain voltages based on a rule 1/3 or something?
From Ids equation you know the Vgs when it is in saturation region. So assume it is in satiration region. Now there is a condition among Vgs, Vds and Vt for saturation region. From this you find out the extreme value of Vds. Set Vds according to your requirement. Then finding the bias resistances is not a big deal I guess