Need help in sentaurus tcad, soi tfet simulation

Hi all, i am having problem in my SOI TFET simulation. The drain current is very low(1e-10), does anyone knows what i can do to increase the Id(to 1e-5)? I am confuse on which model i should used for physic section(Sdevice simulation) for tunneling fets.
Enclosed is the expected result and the result obtained(IDVDS). Here is my coding for SOI TFETs for physic section:

Physics{
* DriftDiffusion

EffectiveIntrinsicDensity( OldSlotboom )
EffectiveIntrinsicDensity(BandGapNarrowing (OldSlotboom))
Mobility(
DopingDep
Enormal

)
Recombination(
eAvalanche(CarrierTempDrive)
hAvalanche(Eparallel)
TrapAssistedAuger
Auger
Auger(WithGeneration)
SRH(DopingDep)
Band2Band(
Model = Hurkx
DensityCorrection = None
)
SRH(
NonlocalPath(
Lifetime = Hurkx
Fermi
TwoBand
)
)
)
}
Physics (MaterialInterface = "Gold/Silicon"){
TATNonlocalPathNC = 2.0e19
}

Regards,
Stephanie Teh;-)

u should include Impact ionization models. Better to go for device manual for the same.

Hi

I am also doing SOI TFET simulation. My physics section is similar to yours. But my drain current does not seem to be right, it has a very unusual shape. I am not sure what I am doing wrong. Can you please share your parameter file? I have followed the SOIFET example to build my SOI TFET.

Thanks
Mou

join this group if you would like to..thanks

use Enormal(Lombardi)

Hello,
Even I am facing same problem. I am getting Drain current of same order. Could anyone please help?

I am also getting same problem.
Please share your structure file.