Why parallel FETs if it's DC?So its 680V DC, and you want to switch in a 40A load?
I would just use parallel FETs.
Can you say what the load is?
Your switching frequency is 120Hz....what is your duty cycle?
(sorry Klaus you must have answered same time as me)
I like the idea of an IGBT, especially with an optocoupler. Can you point me to some examples online?Hi,
AC or DC?
Since you talk about zero crossing I guess it´s AC, but can´t be sure. So please tell us the wavefrom.
What is 680V? Peak, average, RMS?
Same for the current.
My first idea: An IGBT controlled with an optocoupler.
Many applications already available. Documents, discussions, evaluation boards...
Klaus
No. This is a simple task you can do on your own.Can you point me to some examples online?
Ask yourself whether you need a truly ohmic switch, or just
"close enough".
An IGBT or regular BJT will always have a Vce(sat) pedestal.
For the IGBT it's more like a Vbe (MOS shunts PNP B to C).
A MOSFET or GaN FET willbe ohmic all the way down to
zero, of course every device will have some "big-end
nonlinearity" but that's overwith shortly after you start the
transition.
If you want to approach a PhotoMOS SSR output qualities,
but compress the timescale, I repeat my advice to look at
isolating MOSFET drivers (like for example Silicon Labs).
I'd bet TI has some too.
Something with a charge pump inside would be simplest
(no bootstrap diodes etc.) although max rep rate (which is
not an interest here) might benefit from over-strapping to
bootstrap "just in case" (charge pump current vs gate shuttle
current @ freq).
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