alyast
Newbie level 3
- Joined
- Dec 16, 2011
- Messages
- 3
- Helped
- 0
- Reputation
- 0
- Reaction score
- 0
- Trophy points
- 1,281
- Activity points
- 1,301
I know that forming gas anneal leads to passivation of dangling bond on SiO2/Si interface. Forming gas contains 95% of nitrogen and 5% of hydrogen. Why not 100% of hydrogen. I heard that nitrogen is fairly intert but doesn't it will form oxynitride when in contact with silicon oxide at anneal temperatures?