Re: how to get the lamda(Va) from the Ids_Vds curves?
Yes, the "ugliness" of the MOS curves (especially in
more advanced, or aggressively applied nodes) adds
an element of judgement to the extraction.
Biasing at low Vgs and taking your two points from
the straight-line region is best. Avoid the impact
ionization "curl" and stay away from the linear-to-
saturation "knee", both.
Now the number you get, may not be useful in itself
(other than filling in simple equations which may
themselves be rough at best, dating from days when
"short channel" was more than a micron). But it can
serve as a good "fit-to" or a validation of the model
fit.