In saturation MOS has a "voltage drop" D-S that is greater
than Vgs. This is certainly not the case. Perhaps you are
confusing it with BJT saturation which is sort of the opposite.
What you believe about MOSFET on-resistance can easily
be put false by realities of packaging and PCB design.
20mOhms pad-pad on the die could easily become
a hundred or more if packaged using inferior bond wire,
leadframe, cold solder joints or too-thin PCB traces.
At high current and low voltage your measurement
methods also matter. You want a 4-wire (Kelvin)
resistance measurement for sure.
MOSFET on-resistance also increases with temperature
and there may be a self-reinforcing on resistance creep
if you measure it at power, especially with less than
proper cooling.