Not sure there is a real technology behind these "gpdk"s. If there was, then the target foundry (is there?) would know.
Rated voltage is kept below oxide wear out and hot carrier based limits, and short term BVox tends to be about 2-3X the rec supply voltage for the specific device.
You can check after the simulation the log with all the warnings and/or errors. If the breakdown voltage is violated, a warning will appear. Something like "XXX device has exceeded the oxide breakdown voltage of XXX".
Also, a SoA (Safe Operating Area) simulation is useful, but to check the breakdown voltage you must read the PDK datasheet.
If you want breakdown realism then you must add elements for what the MOS compact models fail to cover. And there are other high-Vds behaviors you might want to fit while you're at it (like how the drain starts to curl from impact ionization before hard breakdown, delivering a worse drain linearity than the simple lambda fit).