~MJS
Junior Member level 2
I plan to use the circuit below to measure the breakdown voltage of a MOSFET.
The oscilloscope I am using is capable of 10 mV / div. According to IR's spec, they measure their V_(BR)DSS at 250 uA. So, I thought making R_sense= 100 Ohm would be a good choice, because this would correspond to 25 mV.
Any opinions?
Also, I am still not sure whether I will need the R_limit or not.
FYI: In this first pass, I am going to test the theory on Si-MOSFETs. I plan on applying at least 300V to the drain via a variac, step-up transformer, and full-bridge rectifier.
The oscilloscope I am using is capable of 10 mV / div. According to IR's spec, they measure their V_(BR)DSS at 250 uA. So, I thought making R_sense= 100 Ohm would be a good choice, because this would correspond to 25 mV.
Any opinions?
Also, I am still not sure whether I will need the R_limit or not.
FYI: In this first pass, I am going to test the theory on Si-MOSFETs. I plan on applying at least 300V to the drain via a variac, step-up transformer, and full-bridge rectifier.