I see the pdf. Now, I understand the accumulating and inverse mode. However, one of pdf 's graph confused me.
My question is:
Why the poly/n-well capacitor satisfactorily operates only if the gate voltage is positive enough ?
Hi Ming,
In the above curve, the vertical VTH marking should be more to the right, and you are right saying the (LF) inversion rise should be less steep than the accumulation rise.
You need full accumulation/inversion (corresponding to strong inversion of a MOSFET), i.e. Vth + Voverdrive in order to profit from the largest cap/area ratio.
For LF applications, however, the MOSCAP also works with (enough) negative gate voltage. See the nmos- and pmos-gate-cap behavior (simulated and measured curves) below.
BTW: don't feel irritated by the seemingly inconsistently used terms accumulation & inversion, this just depends on the relative charge signs of the gate and the substrate below.