mos in sub-threshold region

[leebluer]

I would use some mos transistors in sub-threshold region. I only know that it has an exponential character of I~V. I want to know some detailed information. I have refered to some books, but it seems that the sub-threshold region is an unpopular topic, there are few contents about it. can anyone give me some help, or recommend some papers or books?

thanks

 

[nxing]

Check carver Mead's book called "analog vlsi......"( I can not remember the name clearly), you will find lots of stuff about MOS operated in sub-threshold region.

Also, do a search "neuromorphic" in google and you will find lots of papers where most transists are operated in that region.

Hope it helpful!

 

[rajesh13]

can I use current mirroring when my MOS's are operating in the subthreshold region. Actually I am intrested in mirrorring some nano amps of current.

 

[hanjiemy]

I just use it , when i design low-powersupply Bandgap. it's not easy!

 

[rajesh13]

I just use it , when i design low-powersupply Bandgap. it's not easy!

Can you please elaborate, what difficulties you faced while mirroring that small current.

 

[hanjiemy]

opertion point' DC value is variable with temp, corner. Try to avoid the transistor go into saturation region is the most improtant!

 

[leebluer]

hello nxing, thank you for your help!

i know that Id becomes the exponential function of Vgs when the Vd satisfy some demands. now though in my design the mos is in the sub-threshold region, but it isn't in that righr region.

i cannot find that book, can you provide some ebooks? i prefer to have some simple explain. thanks a lot

could anyone give me this paper "The sub-threshold behaviour of the MOS field-effect transistor"

 

[nxing]

tell me the details about this paper such as the author and where was it published, maybe I can find for you.

 

[leebluer]

Hi nxing, thank you so much!

I find that paper from google. but because i am not the member of the journal, i cannot see the full text. i attach some information about the paper.

**broken link removed**

Dieter Kohlert 1998 Eur. J. Phys. 19 125-131

The sub-threshold behaviour of the MOS field-effect transistor
Dieter Kohlert
Fachhochschule Regensburg Fachbereich Elektrotechnik, Postfach 120327, 93025 Regensburg, Germany
Received 24 February 1997, in final form 5 June 1997
Print publication: Issue 2 (March 1998)

Abstract. A simple derivation of the I-V characteristic of the MOS transistor at gate-source voltages below the nominal threshold voltages using simple electric equivalent cicuits is presented.

thanks

 

[nxing]

Hi,

I am not the memeber, either. However, here is an aritcle of this area and I hope it's helpful

 

[tarook79]

Hi, I've used the MOS transistors in subthreshold region in current mirros and many other stuff.
One of the major uses of this mode is in neuromorphic electronics.
I woul recommend you the following refrences:
C. Mead, “Analog VLSI and Neural Systems,” Reading, MA: Addison Wesley, 1989
E. Vottoz, and J. Fellrath, “CMOS Analog Integrated Circuits Based on Weak Inversion Operation,” IEEE Journal of Solid-State Circuits, Vol. SC-12, 1977
T. Gotarredona, B. Barranco, and A. Andreou, “A General Translinear Principle for Subthreshold MOS Transistors,” IEEE Transactions on Circuits and Systems, Part I: Fundamental Theory and Applications, Vol. 46, May 1999
S.Liu, J.Kramer, G.Indiveri, et. al., “Analog VLSI: Circuits and Principles,” MIT Press, 2002

 

[tecsiun]

and i am care of this title , thanks to nxing!