venkateshr
Member level 3
Hi all,
I have a very serious doubt regarding the capacitance(gate channel ) of mosfet.it is about the capacitance of gate when the voltage(vin) is greater than vt . ppl say that the cap is Cox*W*L . but b4 this it is less due to depletion region (for small vin).
what i ask is that even after Vt depeltion layer will be beneath the channel so that makes one capacitance with channel and substrate as two paltes and dielectric(deple.) between them.so series cap makes the cap. very less.
in short after vt it will look like 3 plates in line so two capacitors with first dielectric
in sio2 and other is depletion.
I have a very serious doubt regarding the capacitance(gate channel ) of mosfet.it is about the capacitance of gate when the voltage(vin) is greater than vt . ppl say that the cap is Cox*W*L . but b4 this it is less due to depletion region (for small vin).
what i ask is that even after Vt depeltion layer will be beneath the channel so that makes one capacitance with channel and substrate as two paltes and dielectric(deple.) between them.so series cap makes the cap. very less.
in short after vt it will look like 3 plates in line so two capacitors with first dielectric
in sio2 and other is depletion.