Modeling of SiC BJT static characteristics in Pspice

[viren]

hi,
I have attached a SiC BJT Device output characteristics IC vs Vce curve. I have the problem that some of these curves do not start from origin . They have a negative Ic current at Vce=0 V for different step Ib currents which range from 200ma to 2.2A . Could you tell me what is the reason for this ? .

 

[scottieman]

hi,
I have attached a SiC BJT Device output characteristics IC vs Vce curve. I have the problem that some of these curves do not start from origin . They have a negative Ic current at Vce=0 V for different step Ib currents which range from 200ma to 2.2A . Could you tell me what is the reason for this ? .

It is a normal characteristic of well optimizied BJT device. The meaning of well optimized is the emitter-base junction has larger Vbi (internal potential e.g. 0.7 in normal P/N junction) than the base-collector junction.

Since explaining all stuff here is too long , pls use the hint above to think about why there is a negative current.

Hope this help.
Scottie