Memristor simulation timestep too small

*memristor model
.SUBCKT memristor plus minus PARAMS:
+phio=0.95 Lm=0.0998 w1=0.1261 foff=3.5e-6
+ioff=115e-6 aoff=1.2 fon=40e-6 ion=8.9e-6
+aon=1.8 b=500e-6 wc=107e-3
G1 plus internal value={sgn(V(x))*(1/V(dw))^2*0.0617*(V(phiI)*exp(-V(B)*V(sr))-(V(phiI)+abs(V(x)))*exp(-V(B)*V(sr2)))}
Esr sr 0 value={sqrt(V(phiI))}
Esr2 sr2 0 value={sqrt(V(phiI)+abs(V(x)))}
Rs internal minus 215
Eg x 0 value={V(plus)-V(internal)}
Elamda Lmda 0 value={Lm/V(w)}
Ew2 w2 0 value={w1+V(w)-(0.9183/(2.85+4*V(Lmda)-2*abs(V(x))))}
EDw dw 0 value={V(w2)-w1}
EB B 0 value={10.246*V(dw)}
ER R 0 value={(V(w2)/w1)*(V(w)-w1)/(V(w)-V(w2))}
EphiI phiI 0 value={phio-abs(V(x))*((w1+V(w2))/(2*V(w))) - 1.15*V(Lmda)*V(w)*((log(V(R)))/V(dw))}
C1 w 0 1e-9 IC=1.2
R w 0 1e8MEG
Ec c 0 value={abs(V(internal)-V(minus))/215}
Emon1 mon1 0 value={((V(w)-aoff)/wc)-(V(c)/b)}
Emon2 mon2 0 value={(aon-V(w))/wc-(V(c)/b)}
Goff 0 w value={foff*sinh(stp(V(x))*V(c)/ioff)*exp(-exp(V(mon1))-V(w)/wc)}
Gon w 0 value={fon*sinh(stp(-V(x))*V(c)/ion)*exp(-exp(V(mon2))-V(w)/wc)}
.ENDS memristor