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Memristor simulation in HSPICE

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manish1468

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hi everyone, I have used the code given below but i am getting opposite hysteresis curve. please help me with this.

Code:
* MEMRISTOR
* Ron, Roff - Resistance in ON / OFF States
* Rinit - Resistance at T=0
* D - Width of the thin film
* uv - Migration coefficient
* p - Parameter of the WINDOW-function
* for modeling nonlinear boundary conditions
* x - W/D Ratio, W is the actual width
* of the doped area (from 0 to D)
*

.SUBCKT memristor Plus Minus
+ Ron=100 Roff=16K Rinit=11K D=10N uv=10F p=10

* DIFFERENTIAL EQUATION MODELING *

.PARAM f(x,p)= '1-pow((2*x-1),(2*p))'
Gx 0 x value='I(Emem)*uv*Ron/pow(D,2)*f(V(x),p)'
Cx x 0 1 IC='(Roff-Rinit)/(Roff-Ron)'
Raux x 0 1T

* RESISTIVE PORT OF THE MEMRISTOR *
Emem plus aux value='-I(Emem)*V(x)*(Roff-Ron)'
Roff aux minus Roff

*Flux computation*

*Eflux flux 0 value={SDT(V(plus,minus))}

*Charge computation*

*Echarge charge 0 value={SDT(I(Emem))}

* WINDOW FUNCTIONS
* FOR NONLINEAR DRIFT MODELING *

*window function, according to Joglekar
*.func f(x,p)={1-(2*x-1)^(2*p)}
*proposed window function
*;.func f(x,i,p)={1-(x-stp(-i))^(2*p)}
.ENDS memristor

Xmemrist aa 0 memristor Ron=100 Roff=16K Rinit=11K D=10N uv=10F p=10
Vtest aa 0 SIN(0 1.2V 1 0 0 0)
.tran 100U 5
.plot tran V(aa) I(Vtest)
.option list node post=2 ingold=2 runlvl=0
.end

Thank you
 
Last edited by a moderator:

replace i and v in plot command
 

replace i and v in plot command

dear ahmd1954

I got the correct curve for sine wave input but i am not getting correct hysteresis curve. But i am not getting correct hysteresis curve for square pulse input. Also, please help mewith how to plot the resistance of the memristor which should keep changing between Ron and Roff for +veand -ve polarity.

Thanking you in anticipation.

Manish
 

that hysteresis curve is for sin wave. what is your plot for square wave and what do you expect from that?
I didn't plot resistance of memristor but I think you should perform dc sweep.
 

that hysteresis curve is for sin wave. what is your plot for square wave and what do you expect from that?
I didn't plot resistance of memristor but I think you should perform dc sweep.

Dear ahmd1954
I am applying square pulse input as given in the HSPICE code given below. With the polarity of square pulse the resistance of memristor should switch between Ron and Roff. I am unable to plot the mermristance state of memristor. Please help me with this.

Thanking you in anticipation.

Manish

HSPICE code for memristor
* MEMRISTOR
* Ron, Roff - Resistance in ON / OFF States
* Rinit - Resistance at T=0
* D - Width of the thin film
* uv - Migration coefficient
* p - Parameter of the WINDOW-function
* for modeling nonlinear boundary conditions
* x - W/D Ratio, W is the actual width
* of the doped area (from 0 to D)
*

.SUBCKT memristor Plus Minus
+ Ron=100 Roff=16k Rinit=11k D=10N uv=10F p=10

* DIFFERENTIAL EQUATION MODELING *

.PARAM f(x,p)= '1-pow((2*x-1),(2*p))'
Gx 0 x value='I(Emem)*uv*Ron/pow(D,2)*f(V(x),p)'
Cx x 0 1 IC='(Roff-Rinit)/(Roff-Ron)'
Raux x 0 1T

* RESISTIVE PORT OF THE MEMRISTOR *
Emem plus aux value='-I(Emem)*V(x)*(Roff-Ron)'
Roff aux minus Roff

*Flux computation*
*Eflux flux 0 value={SDT(V(plus,minus))}
*Charge computation*
*Echarge charge 0 value={SDT(I(Emem))}
*.meas TRAN charge INTEG I(Emem) FROM = 100u TO = 5s
* WINDOW FUNCTIONS
* FOR NONLINEAR DRIFT MODELING *
*window function, according to Joglekar
*.func f(x,p)={1-(2*x-1)^(2*p)}
*proposed window function
*;.func f(x,i,p)={1-(x-stp(-i))^(2*p)}
.ENDS memristor

*.param Vmin=-1V Vmax=1V
*.PARAM Vinitial=Vmin Vpulsed=Vmax td=0
*+ tr=1ns tf=1ns PW=100us per='tr+tf+2*pw'

Xmemrist aa 0 memristor
Vtest aax 0 pulse (Vinitial Vpulsed td tr tf PW per)
Vaux aax aa 0
.tran 100u 1m
.plot tran V(aa) I(Vaux)
.probe rmem=par('(v(aa))/I(Vaux)')
.option list node post=2 ingold=2 runlvl=0
.end
 
Last edited:


can you put your output here?

Untitled.jpgUntitled1.png

Please help me to plot the resistance of memristor.

The second image is for the HSPICE code of HP memristor given below:
* HP mem model
* TE: top electrode
* BE: bottom electrode
* XSV: external connection to plot state variable (that is not used otherwise)
* V(f):f(x)
* V(f1):f1(Vin)
.SUBCKT memristor TE BE XSV mre
+ Ron=1k Roff=20k x0=0.5 D=10N uv=10F p=2

* window function
*biolek window
*.Param f(V1,I1,p)='1-pow((V1-stp(-I1)),2*p)'
* joglekar window
.PARAM f(V,p)='1-pow((2*V-1),2*p)'

* mem I-V relationship
.PARAM IVRel(V1,V2)='V1/(Ron*V2+Roff*(1-V2))'

* circuit to determine state variable

Gx 0 XSV value='I(Gmem)*uv*Ron*f(V(XSV,0),p)*V(out)/pow(D,2)'
Cx XSV 0 5u
* see value of window func
Ga 0 mre value='(Ron*x0+Roff*(1-x0))'
r mre 0 1

* Threshold 1V
G1 gnd out VCCS PWL(1) TE BE
+ -1V,0 1V,0 1.00001V,1 IC=0
R_1 out gnd 1

.ic V(XSV)=x0

* Current source representing memristor
Gmem TE BE value='IVRel(V(TE,BE),V(XSV,0))'

.ENDS memristor

.param Vmin=-3.6V Vmax=3.6V
.PARAM Vinitial=Vmin Vpulsed=Vmax td=0
+ tr=1ns tf=1ns PW=100us per='tr+tf+2*pw'

Xmemrist TE BE XSV mre memristor
Vtest TE BE pulse (Vinitial Vpulsed td tr tf PW per)
.tran 100u 1m
.plot tran V(TE,BE) I(Vtest)
.probe rmem=par('(v(TE,BE))/I(Vtest)')
.option list node post=2 ingold=2 runlvl=0
.end
 

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