yes, by growing the oxide layer thicker for the HV transistors and adjust the doping density for source/drain area, you can have a different type of HV transistors integrited in the same process, we use this techniq a lot.
What is your definition of the HV devic ? "To make the HV device in LV process " does it mean only LV oxide allowed ?
If only drain side HV device is needed, LV process with LV oxide could have such HV device through the drain side layout and doping engineer (may be logic process compatible, no needs for extra mask).
But if your design need full range HV swing for D,S and Gate, you have to go for the HV process for dual gate oxide.