Startup time is the main issue. Then lot of nodes become really high impedance and gets coupled to power/ground noise. This makes BG outputs to completely die. So need to take care of couplings. Then area is bigger for low power bandgap due to large resistors required for this.
With the BG structure described in Allen and Holberg, the resistor are in the range of over 5 MOhm in order to get a BG reference with lower than 1 uA current.
Is this approach feasible ?
Is there any ways to subsitute the high value resistor with smaller area ?
with 1uA, you can bias your transistors in weak inversion to get high gm/I and low voltage offset. but the speed is low which is normally the limitation