[SOLVED] Layer definitions for TSMC 350n

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dreamyboy_999

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Can anyone tell me the definition (and use) of these layers in TSMC 350 nm process? N3V,Wellbody,DIFF
 

I don't know the TSMC 350nm PDK, but from these layer names I'd guess:

DIFF: Active Area, i.e. the etched area where diffusions (or implants, nowadays) may penetrate into silicon
N3V: N implant for the 3V-NMOS transistors, usually into P bulk silicon
Wellbody: deep NWell implant into P bulk silicon, building the N body (or Nwell) for PMOS transistors
 

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