Is there similar model in Silvaco TCAD Atlas vs Sentarus Non local band to band tunnelling model

[jasontung]

Current I’m trying to perform modeling on GaN HEMT ohmic contact by using software of Silvaco. The structure is simple whereby to have an interfacial layer of heavily doped N++ layer between contact and semiconductor which for both anode and cathode. N++ heavily doped layer will be under the metal contact (anode and cathode) and the material is GaN and semiconductor bulk also GaN however with lighter doping (1E+17/n-type & this if fix). GaN N++ layer range from 1E+20~5E+17 uniform n-type. I understand there is same simulation with using Sentaurus software and using non-local band to band tunnelling model and I was trying to use same model in Silvaco. However the result turn out to be the current is one order magnitude lower 10E-7 for mine in Silvaco vs the 10E-6 compare to Sentaurus one. And I just would like to get some advice here is there any similar model in Silvaco vs Sentaurus non-local band to band model?