Is anybody doing research on models in terms of MOSFET mobility?

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Alex Liao

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Hi,

I have investigated this following papper. Jiying Xue, et. al, "A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization", IEEE Transactions, March 2012.

Actually I am interested in models reflect mobility, Vth and Isub. The case study of this paper has successfully showcased the error of performance between the one which considers no STI effect and the one does.

Is there anyone who knows how to acquire the variables/constants in equation (13) and (14)? (Especially the mhh and mhl, it seems these are mass in heavy/light energy band in channel)

If somebody can answer this I would appreciate that.

Regards,
 

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