ripoo82
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What are the disadvantages of the one vs the other?
I presume that for the integrated one, the bulk connection and the mos are in the same p-well, so there is maximal substrate connection.
The detached one has STI between the MOS and the bulk, so there are in separated p-well, but connected by the p-epi.
When do you use the one, and when the other?
I presume that for the integrated one, the bulk connection and the mos are in the same p-well, so there is maximal substrate connection.
The detached one has STI between the MOS and the bulk, so there are in separated p-well, but connected by the p-epi.
When do you use the one, and when the other?