Information on native MOSFETS

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I am trying to find more insightful information of the characteristics of a native or low threshold MOSFET. I can find spurs of info in some papers and maybe one sentence shortly dedicated to some feature of a native FET, but this is often done with no source or thorough explanation. Do you know of any paper, book or any other media that touches this topic in a broader extent?
 

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Historically they are depletion mode MOSFETs. Currently in CMOS technologies, low threshold device can be obtained by low doping (or not using extra doping) and/or by using various gate materials with different electron work functions. Classic short channel effects are also used to lower the threshold.
 

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Hi, I am right now working with an enhancement native n-channel mosfet. Do you have some source that talks about the process steps involved in manufacturing such a device or talks in depth about the benefits and disadvantages?
 

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It's just body doping (typically quite low, "intrinsic") and
gate poly doping, their difference makes the work function.

I used to work in a technology that gave me depletion,
intrinsic, low VT and "regular" VT of both N and P type.
There were only two VT-adjust implants per species
(or none) to get all 8 types. Crossing up the S/D and
gate poly doping was another degree of freedom.

Not all were that great, but I used them all on occasion.

This was an oddball SOI technology. I see some JI
that has intrinsic NMOS, this would require either an
unusually light body doping or a really jacked work
function. RF technologies will make efforts to deliver
a zero-VT FET for switches and linear PAs.
 

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