How to implement high resistance of MegaOhm orders in CMOS .Actually this is needed for my filter design..And which are the process available that has high res and high cap density ?
use N-well resistors for high values,although area will still be high for Mohms..
generally MOS capacitors are used to implement cap of the order of pF.. u can try DRAM capacitor technology for high density....
Gate poly which is not metalised gives high resistance in range of 1K/sq.
Has good VC and TC. Also the minimum width for 0.18 process could be as small as 1.5u
The ony way to achieve high R with reasonable area is MOS device. You may need to design some kind of calibration/ or tracking ckt to control its value.
If you have high rho poly resistor with 1K/sq resistance, and minimum width of 1.5u you would be requiring 3000sq micron of silicon area.
Well I would say cheap and has better performance compared to MOS resiator or Nwell resistor
The ony way to achieve high R with reasonable area is MOS device. You may need to design some kind of calibration/ or tracking ckt to control its value.
J. A. Geen, S. J. Sherman, J. F. Chang et al., “Single Chip Surface Micromachined Integrated Gyroscope With 50°/h Allan Deviation,” IEEE J. Solid-State Circuits, Dec. 2002.