IGBT's Parallel Operation Nedd Help..

Hi
I want to know that what are the design considerations for parallel operation of high power discrete IGBT's with over 1000A rating.
Or using a single IGBT with sufficient voltage & current rating is a better option? Because these IGBT's are very expensive..

Any study material or papers..

regards
Hussain Aftab

Hello Hussain,

I would recommend you to visit the library section of the producer(s) that you have in mind, as it isn't just a matter of positive tempco as with mosfets. Google (or other site) can be helpful.

For high frequency power circuits, I like paralleling as it gives me better control over parasitic inductance. On of my last application was a soft-switching semi-resonant converter (20 kW range) where I used separate inductance and separate SiC rectifiers to equalize the transients. All three devices where driven from one heavy discrete driver (via resistors).

The guidelines from IXYS are in IXAN0058, you may also check (IRF): www.irf.com/technical-info/appnotes/an-990.pdf

If you application permit, you may use non-punch through or field stop types, these have similar "rdson" behavior as mosfet.