I simulated NMOS transistors in cadence and see that there are two currents, Id and Ids.
Id : current entering the drain
Ids: current that enters the drain and leaves the source
Are they always equal?
Ids is the drain to source current only (the one we are interested in for general analysis) but Id is the total drain current this may also include drain to bulk leakage.
No - I don´t think so (because there is no difference between drain and source current).
I think, the subscript stands for "short circuit" of the Vgs voltage (Id for Vgs=0).
No - I don´t think so (because there is no difference between drain and source current).
I think, the subscript stands for "short circuit" of the Vgs voltage (Id for Vgs=0).
Hi, Anhnha;
Id is the darin current entering into MOS while there is some leakage in bulk that's why Ids is some how different from Id. you can verify it in CADENCE.
The question was if Id and a current called Ids are equal or not.
Without any doubt, Id is the actual drain current.
Because source current=drain current, we do not need a separate symbol Is.
However, with the aim to write a formula for the function Id=f(Vgs) we need the threshold voltage (Id=0) and another typical point for Id (which determines the slope of the curve).
And there was an agreement to use (for depletion types) the current Id for the condition Vgs=0.
In most cases, this current is written as Id,s or Id,ss.
OK - we always have parasitic effects everywhere. Do you think this justifies a specific name? I don´t think so.
The main question is: What means anhnha (the questioner) when writing "Ids"?