I simulate the breakdown voltage of the power mosfet on the silvaco atlas but it doesn't work. Help me please

go atlas
mesh space.mult=1.0
x.mesh loc=0.00 spac=0.1
x.mesh loc=3.1 spac=0.1
x.mesh loc=6.2 spac=0.1
x.mesh loc=7 spac=0.1
x.mesh loc=10 spac=0.1
x.mesh loc=12.5 spac=0.01
y.mesh loc=0.00 spac=0.1
y.mesh loc=0.25 spac=0.05
y.mesh loc=1.3 spac=0.05
y.mesh loc=8.3 spac=0.1
y.mesh loc=28.3 spac=0.5
y.mesh loc=42.6 spac=0.1
region num=1 material=air
region num=2 silicon x.min=0 x.max=12.5 y.min=0.3 y.max=32.5
region num=3 silicon x.min=0 x.max=8 y.min=0.3 y.max=8.3
region num=4 silicon x.min=3.1 x.max=7 y.min=0.3 y.max=1.3
region num=5 sio2 x.min=6.2 x.max=12.5 y.min=0.25 y.max=0.3
#region num=6 silicon x.min=0 x.max=8 y.min=8.3 y.max=28.3
region num=7 silicon x.min=8 x.max=12.5 y.min=0.3 y.max=28.3
region num=8 silicon x.min=0 x.max=12.5 y.min=28.3 y.max=42.5
electrode name=source x.min=0 x.max=4.5 y.min=0.1 y.max=0.3
electrode name=drain x.min=0 x.max=12.5 y.min=42.5 y.max=42.6
electrode name=gate x.min=6.2 x.max=12.5 y.min= 0 y.max=0.25 material=polysilicon

doping n.type uniform conc=5.0E15 x.min=0 x.max=12.5 y.min=0.3 y.max=28.3
doping p.type uniform conc=1.0E17 x.min=0 x.max=8 y.min=0.3 y.max=8.3
doping n.type uniform conc=1.0E20 x.min=3.1 x.max=7 y.min=0.3 y.max=1.3


doping n.type uniform conc=1.0E20 x.min=0 x.max=12.5 y.min=28.3 y.max=42.5
save outf=transistor.str

#models srh conmob bgn auger fldmob

models mos print

#methof newton itlimit=25 trap atrap=0.5 maxtrap=4autonr nrcriterion =0.1\ tol.time=0.005 dt.min=1e-25
method newton trap maxtraps=10 climit=1e-4 ir.tol=1e-30 ix.tol=1e-30
impact selb
interface qf=3e10
output e.field
solve init
solve vsource=0
solve vgate=0
log outf=IC_VC_full_3.log master
solve vdrain=0 vstep=0.1 vfinal=1 name=drain
solve vdrain=1 vstep=1 vfinal=100 name=drain


struct outfile=proboi3.str