For sure this transistor can get 5W CW output power.
Both internal amplifiers (Carrier and Peaking) are two stage amplifiers, and each one use a Vg gate voltage to set the required Idq.
But I think is no reason to use this transistor just for amplifying a CW signal. Doherty approach is used to get a linearized PA which amplify signals with complex modulations.
Check sites Ampleon, NXP, Infineon, Qorvo, for LDMOS medium power transistors.
Also I am not a big fan of GaN power transistors. Not necessary due to required bias sequence of GaN (which can be a pain anyway), but due to the smoother transition into the saturated region than an LDMOS PA. This smoother transition of GaN can be critical in order to determine the linearization system complexity.