zhengyudennis
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Dear all,
When I use MOSRA in HSPICE to simulate NBTI effect of using circuit by ten years, I am not sure how to specify the proper value of parameters under different technology nodes (e.g., 65nm, 32nm). For example, the parameter tito, which is the "first parameter for interface trap inducing threshold voltage degradation", is not a typical parameter in the formula of NBTI in open literature. Thanks very much for the help on it.
When I use MOSRA in HSPICE to simulate NBTI effect of using circuit by ten years, I am not sure how to specify the proper value of parameters under different technology nodes (e.g., 65nm, 32nm). For example, the parameter tito, which is the "first parameter for interface trap inducing threshold voltage degradation", is not a typical parameter in the formula of NBTI in open literature. Thanks very much for the help on it.