How to simulate ion implant in Silvaco...I need help...

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Hi..
My project is to process simulation program SILVACO to study dopant introduction in silicon substrate by ion implantation..But I dont hv any idea to write the code for
1.define dose,energy,Rp and straggle
2.Perform implant
3.Perform annealing

Thanks for ur help...^^;-)

Process parameters
Wafer orientation <111>
substrate dopants :Boron
substrate doping :5e15
Masking oxide thickness :0.7um
Desired peak dopant concentration:3e19
juction depth:0.35um
Annealing :900oc for 30minutes

Template of the input file for ion implantation simulation
#the x dimension definition

#vertical definition

#initialize the substrate

#masking oxide for implant

# etch window for implant

#define dose,energy,Rp and straggle
moments dose= energy= rp= drp=

#Perform implant

#Perform annealing
 

Hi, as far as i konw,a simple way to handle this is use the Optimizer in deckbuild.
Besides, the dose and energy etc. should be required by the procssing and device design and all of this need to be confirmed by literature.
 

Download SRIM/TRIM - it will allow you to create stopping ranges for any implant species in any material. You can then select the energy based on the required range that you need. The straggle is not controllable and is a function of both the species, energy and material.

Will you be tilting during implant to avoid channeling? If so 7 degrees is the usual tilt angle.

You could also use the analytical gaussian model for implants to calculate the dose required to achieve a peak concentration of 3e19 ions/cm3 just about any device physics book will discuss all this, try Sze.
 

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