Cherry Shan
Newbie level 3
Hi,everyone
hope everything going ok in ur life.
My project is on simulation of a junctoinless NMOSFET which has a gate length of 20nm using ATLAS.Recently,I've finished the work of simulating the electrical characters ,such as Vth,DIBL,S-S,etc.Now I'm trying to simulate the hot-carrier effects.I've found an example of "mos2ex02.in" in ATLAS which simulates the hot-electron reliability of NMOS.So I decided to use the same statements in general.However,some specific parameters should be changed which I'm not sure about.In addition,there is a "degradaton" statement in the code, but the output window shows that "Warning: Degradation model is not available",and I don't know why.
Need your help guys.
Thanks in advance.
hope everything going ok in ur life.
My project is on simulation of a junctoinless NMOSFET which has a gate length of 20nm using ATLAS.Recently,I've finished the work of simulating the electrical characters ,such as Vth,DIBL,S-S,etc.Now I'm trying to simulate the hot-carrier effects.I've found an example of "mos2ex02.in" in ATLAS which simulates the hot-electron reliability of NMOS.So I decided to use the same statements in general.However,some specific parameters should be changed which I'm not sure about.In addition,there is a "degradaton" statement in the code, but the output window shows that "Warning: Degradation model is not available",and I don't know why.
Need your help guys.
Thanks in advance.