Hello Everyone, I have the following Spec
Junction Temperature 125C
Power Consumed:2W
Ambient Temperature=60C
What parameter should i consider in the datsheets of MOSFET such that the selected MOSFET will meet the Spec defined for temperature.
Regards
Santhosh V
The parameters you consider are mechanical thermal resistance and modifiers for air flow... Restricted, free convection, forced air velocity. Also there is heat velocity for rapid spreading, but I'll ignore that for now. The thermal parameters are either Rθ
JC for packages with heatsink under case or Rθ
JL for ones without. (Not recomended)
Similar to Ohm's Law, each layer has thermal resistance, Rθ, with the heat flux resulting in temperature change, much like the electrical properties of MOSFET of ΔVds=ΔI*RdsOn and P=I²RdsOn ...
You have ΔT=ΔP*Rθja [°C or K]
Rθja=Rθjc+Rθcladding + Rinsulated-coating or heatsink to air
This is appended by lack of airflow Rsink-air and reduced if forced air cooled depends on surface arial density and only 25~50% for simple PCB or 500% for high density heatsink fins.
Then all good designs have a margin and tolerance for aging so you choose 85 to 100°C max for Tj rather than 125°C, so you may have to reduce P with a lower RdsOn.
Remember using
no margin, in free air.
ΔT=ΔP* Rθja = (125-60)=2W * Rθja
Rθja=32°/W
Where Rja=R(jcn-amb.)= (Rjc + Rsolder + Rcopper-heatsink)
Each layer of material has a thermal resistance. Copper area, FR4, soldermask, air but for simplicity, we often neglect the obvious and only consider the conductor.
There are website charts for copper thermal resistance vs weight(oz.), area but example 2sq.in.1oz 2 layer Cu is 45°C/W but can be improved to 25°C/W with hundreds of microvias reduced to 20°C/W with 3m/s surface air speed.
Considering cost of copper layout, it is cheaper to reduce RdsOn such as 20mΩ $0.11@3k
https://www.digikey.com/product-detail/en/AON7412/785-1582-2-ND/3152539