How to get power gain of Power Amplifier more than 15 dB using GaN HEMT

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I am designing Power Amplifier (PA) using Win Semiconductor's 0.15 um GaN on Silicon substrate at Ka-Band frequencies from (26-32)GHz. Right now I am getting power gain of the designed PA is around 1 dB for above said frequencies. How to enhance this power gain from 1 dB to around 15 dB. Though I have designed perfect Input and output matching circuit also, am getting too low power gain.
 

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Max Gain is around still 4dB, how do you expect 15dB Power Gain ??
Do you know what max Gain does mean ?
 

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    pusparaga

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Now I am getting Maximum Gain around 17 dB, but normal gain getting around 9 dB. what to do for getting normal gain equal to Maximum gain. what is the meaning of Maximum Gain.
 

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You bias the transistor without any matching circuit and see MAG and MSG to get an idea how much gain can be obtained from this transistor.
 

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    pusparaga

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BigBoss said:
You bias the transistor without any matching circuit and see MAG and MSG to get an idea how much gain can be obtained from this transistor.
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Yes. I did as you said. I am getting Maximum Gain around 17 dB. How to get s21 around 17 dB.
 

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Use "Simultaneously Conjugate Matching" feature of ADS, If you don't know what it means, read serious textbooks. This feature will give you Appropriate Impedances that should be matched for Input and Output simultaneously at single frequency.
For wideband application, this is not possible due to varying Impedance values. But an average solution is surely possible.
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You make seriously a mistake. This transistor cannot give 17dB GMax. Verify your set-up.
 
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Another point I don't see here, is that getting +15dBc means
you'd need a transistor with about 32X the signal bandwidth.
Presuming a roughly fixed GBWP. So that's like 1THz, given
your 32GHz interest, and good luck with that. Believe that kind
of performance still has to be hand-whittled out of billet
unobtainium by unionized elves with serious medical conditions.

You will end up at a cascade lineup I expect.
 

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