How to discretize a continious doping profìle in sentaurus tcad

[sdutta]

Dear Friends,
I wanna study the random dopant fluctuation effect in mosfet. But in order to do so I have to discretize the doping profile. But I dont know whether I can discretize a continious dopinng profile in SENTAURUS or I have to incorporate it in some other way.

Please help me regarding this matter.

 

[sirgogo]

are you applying your doping in SNMESH or SPROCESS ?

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look here: http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3552816/


sounds like what you're trying to do

 

[sdutta]

Thank you sir for your kind reply..... But i am new in SENTAURUS and dont know how to discretize doping in sentaurus mesh....... Sir please help me regarding this matter

 

[sirgogo]

okay, but you're going to have to give me more than "you want to discretize doping".

are you trying to simulate the processing or growth (as in SPROCESS) for the inter-mixing for dopant incorporation?

or

do you want to apply your own analytic doping profile (as in SNMESH) to just simulate devices?