How to define aging parameter for MOSRA in HSPICE

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mohdsyafiq84

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Hello,

I went through the 'HSPICE User Guide: Simulation & Analysis' particularly focusing on MOSRA. But nothing mentioned about how to define tthe parameters to build aging model in pre-stress simulation. Example for NBTI (PMOS) in MOSRA, we need to define parameter like tit0, titce and etc....

Could anyone out there who has an experience using MOSRA to help me? Really appreciate your thoughts.

Thanks
Syafiq
 

I think you can get these parameters only from semiconductor companies (fabs), who are able to extract them from results of their accelerated aging tests on their transistors. Such parameter values usually are company confidential, given only to good customers after signed NDA.

Without access to such parameters, you can only use those published in the HSPICE manual (those not given have default values), or use parameter values from literature.
 

These params have to be back-fitted from data. If you
have aging data reports from the fab (you may be lucky
just to get before / after curves, or may just get some
assertion about numerical drifts, or that it "passed" with
some low level delta criterion which then becomes your
worst case to fit ).

A qualification report ought to be somewhere in the
foundry data pile, because your customer will sooner
or later need to do their due technical diligence about
quality, reliability, yield and so on.

Similar geometry flows are likely to bear some, but not
complete, similarity (reliability in gate oxides being
largely a matter of chemistry and cleanliness, and
subsurface doping profiles).
 

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