hari_preetha
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I am using E-PHEMT, avago ATF54143. I am exactly working at 2.3 GHz. As I asked in the posting # 1, what must be minimum value to set stability to start and what must be end value of stability to obtain consistent Biasing values. I am working in the narrow band. Can you clarify.Stability is not considered in the band which is interested only, instead stability should be checked until fmax.Therefore, your LNA may work in the band but it may also oscillate somewhere at out of band.
What type of pHEMT do you use ?? D-Type or E-Type ??
You LNA is probably oscillating somewhere but your don't know.I understand this from absolutely different OP compare to simulation.
Ids = 300 mA.
I am using E-PHEMT, avago ATF54143.
Yes, absolutely transistor is spoiled. What could be reasons showing inconsistent biasing values.Event though in simulation, it is showing correct values. Is it any faulty range of stability values, what I set for 2.3 GHz design of LNA.Your transistor is dead now. Absolute maximum rating is 120mA Ids.
I got soldered from one of the export, he knows very well about the micro soldering. But he doesn't know first gate should solder, later drain ...etc. I should have told it. I didn't tell it. Because, I don't know, what are the precaution we have to take while soldering microwave passive and active components.PHemts are highly ESD sensitive,did you take precautions while handling,soldering and testing this device?
Did you take precautions in connecting gate first and drain supplies later?
How to avoid the inconsistent results.
Thank for your advices. What I did is, totally 3 transistors connections are in my circuit, unknowingly one of the transistor drain and source was not connected, remaining gate and source was connected. When I connected the power supply and switched on, it was showing Vgs = -1 V, Vds = 4 V, and Ids = 170 mA. After noticing inconsistent results, I rechecked the circuit, there was no connection of drain and source to one of transistor.Another issue may be applying voltages...
I presume that Vdd and Vgs sources are separate...
If you apply Vdd before Vgs, while Vdd has its own voltage Vgs will be 0 and it's out of operating voltage for Vgs and FET might be burned during connection of Vdd...
Thank for your advices. What I did is, totally 3 transistors connections are in my circuit, unknowingly one of the transistor drain and source was not connected, remaining gate and source was connected. When I connected the power supply and switched on, it was showing Vgs = -1 V, Vds = 4 V, and Ids = 170 mA. After noticing inconsistent results, I rechecked the circuit, there was no connection of drain and source to one of transistor.
After we removed all three transistors and replaced with new three transistors, again it was showing inconsistent results. I thought that once it starts showing inconsistent results, it will never show the consistent results. Can you clarify it. We can take all these mistakes as precautionary in the next design.
Sorry for prolonged discussion. As you suggested, I didn't connect independently gate and drain biasing voltages. I have connected directly 3 V from power supply to the Drain using inductance and using voltage divider resistors and inductance making 565 mV to the Gate. Once power switch on, gate and drain voltage appear automatically, I can't give independently gate voltage, later drain voltage.As I said before, connect Vgs before Vdd.You have namely to connect Vgs to max. negative voltage-let say -5V- at the beginning before connecting Vdd then you should connect Vdd and increase Vgs until you obtain the right currrent.
General procedure looks like that and do not connect any measurement equipment especially to Gate unless you see the good currrent consumption on the current panel of power supply.Otherwise the LNA can start to oscillate and this may damage the transistors.
one of the transistor drain and source was not connected (...) Vgs = -1 V, Vds = 4 V, and Ids = 170 mA.
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