If you are using these BJTs as reference diodes then you
would want to look at how much Rc contributes to Vf at
your chosen set-current. Probably the area of the bandgap
will be resistor dominated in a low power design and maybe
Rc does not matter at super low currents. But you want
both diodes, big and little, to be on dead-log-linear regions
of the log(If) vs Vf curve to get classical bandgap operation,
ant very low and very high current densities your tempco
will be harder to get repeatable. But this is seldom, if ever,
expressed by a model. Has more to do with the real silicon
and where it does, and doesn't, agree.
In forward-active operation, emitter geometry can also be
driving collector contact geometry and Rc; emitter current
density also greatly affects the hFE and you would like to
be near peak, especially if this device is "peaky" to begin with.
And again the operation as a diode (transdiode) can be
affected by how much the collector-emitter conduction
accounts for If, transdiodes "idealize" the diode curve if
beta is high.