The nominal gate length is also a proxy for many other
process attributes. Some are co-scaled and some are
just "shiny new equipment for all".
For example there is no value in having a thicker gate
ox than your minimum L can reliably stand off the same
voltage, for. You can go higher in L, if you want, but
the technology is always developed against speed and
power and density goals because analog guys don't
fill fabs.
Things like interconnect pitch tend to follow the tool
set that defines the gate, but at a safe distance. So
you may see 0.8um metal pitch on 0.18um and 0.5um
pitch on 90nm (just an example, not from anyone's PDK).
Newer nodes cost -way- more up front and per wafer,
and only somebody with a big demand or access to some
multiproject service can make sense of the pricing these
days. If your project does not need 20nm (and you, on
your own, almost certainly cannot string together enough
transistors in a year's time to fill the reticle, so you don't -
your 20-man team with a fat reuse library behind it and
synthesis as the design method, might) then there is no
good reason to go there. Buy what you need and no more.
That's engineering economics 101.