Re: carrier mobility
Holes and Electrons have different mobilities due to:
1. The material and state of matter in specific.
2. The band, shell or energy level the carriers are concerned.
3. The field effect at which these carriers are subjected to pull and push.
In Silicon, the average mobility of electrons have 2.71 times faster than holes, sometimes approximated to 2.5 or even 3.0 for simplicity. The reasons, as highlighted above, are:
a. Electrons travel in the conduction band of any solid-state matter, conductor, insulator or semiconductor. Since Silicon is a semiconductor, electrons travel in the conduction band. In any solid-state matter, conduction band is the overlapped shells, formed by the outermost shells farthest from the nucleus of any atom, thus having higher energy level than innermost shells. Therefore due to inter-atomic forces, electrons are highly mobile.
b. Holes are not doubt the vacant charge, or opposite (positive) charge when electrons moved. However this is a crude concept. Holes are in fact created because of the elevation of electrons from innermost shells to higher shells or shells with higher energy levels. Since holes are locked or subjected to the stronger atomic force pulled by the nucleus than the electrons residing in the higher shells or farther shells, holes have a lower mobility.
c. Electric field asserted to the material accelerates the velocity of the electrons, not holes. In long-channel MOS transistor, it is theoretically correct to assume constant mobility of electrons to be 2.71 faster than holes. But not in short-channel MOS transistor since the electric field is so strong that engulfs the effective channel length, the constant mobility does not hold anymore, mobility increases with distance closer to the field source. Conversely, hole mobility decreases.
You can read more about semiconductor physics on topics such as carrier transport, mobility, energy levels and solid-state matter from books written by S. M. Sze, Michael Shur, Tyagi, Benjamin Streetmen, Kasap, Neaman etc.
PhD MSc DIC BEng (Hon) Imperial College
Analog Devices Inc (Ireland)
Added after 1 minutes:
BTW, holes are not imaginary charges. Holes are real charges.