how calculate AD,AS,PD and PS with 0.18 µm CMOS technology

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So.nia

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hello all;

how to calculate As , Ad , Ps and Pd for mos transistor . knowing i use model BBSIM3 ; CMOS 0.18um

thanks
 

Usually these values are extracted from the layout. during the simulations with Hspice you can find with LX(Mnos) commands which are in the hspice manual. but these values are better extracted from the layout.

So.nia said:
hello all;

how to calculate As , Ad , Ps and Pd for mos transistor . knowing i use model BBSIM3 ; CMOS 0.18um

thanks
Click to expand...
 

but in the simulation i need to introduce Ad ; As ...

- - - Updated - - -

but in the simulation i need to introduce Ad ; As ...
 

but i use Pspice and the value of Ad.... i must intruduce manually , i need the formula ?
 

Ad is simply the drain area=Length_d * W , As the source area=Length_s * W , see here:
where W is identical to gate width W , but the lengths of the source and drain areas usually are different from the gate length L .

Pd, Ps are the periphery lengths of the drain resp. source peripheries, i.e either Pd=2*Length_d + 2*W or Pd=2*Length_d + 1*W , depending on the state of the PERMOD parameter, see the link given by Keith above! Similar for Ps.
 

ok i need to check if this formula existe Ad = As = 6*λ*W and Ps = Pd = 2(6*λ+ W)
knowing λ is dimensional factor;

and if i can use this formula in psipce

thans again
 

So.nia said:
ok i need to check if this formula existe Ad = As = 6*λ*W and Ps = Pd = 2(6*λ+ W)
knowing λ is dimensional factor;
Click to expand...

This is true (only), if the lengths (extension orthogonal to the gate) of the source and drain areas both are 6*λ .

So.nia said:
... and if i can use this formula in psipce
Click to expand...
If λ is defined as parameter, it should work in PSPICE, too.
 

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