let's say we're talking about an IGBT. you can switch 1500V drain to source with minimal current flow. but to do this in NANOseconds will be rather difficult. look at the datasheet of the switch, it has a certain time delay and rise time (and same for switch OFF). there are very few (any?) high voltage devices that can switch that fast realistically. i have designed 600V switching in 150 nano seconds, and that was with high end equipment. the problem is the parasitic capacitance in the circuit, specifically, between the high voltage switch (IGBT drain-source) and the gate driver circuit which is providing the low voltage control signal (IGBT gate-source). and then the coupling that exists between this gate driver and the digital source (i.e. other side of the opto coupler). you need a killer interface there.
some other things to think about.. are you go up in applied voltage your derating factor should go up too. i.e. you can switch 40V with a 50V rated switch. you can switch 600V with a 1200V rated switch. see the ratio increase? now you want to switch 1500V and you want to do this FAST (nano seconds!?) what switch will do this and what will it's voltage rating be?
if you are accepting of using a GTO as your switch then this is achievable. if you want small current, you are probably better off with two 1200V rated IGBTs in cascade. or 1200V rated mosfet if the current is low. but know that there are more risks with cascade topology causee you must ensure a good switch voltage balance.
good luck
FvM - wow, you seriously have 27,000 points now? helped over 1000 people? nice!
Mr.Cool