High speed BJT with collector current 1A

Looking for a transistor (through hole)

Amp of Current I'm dealing with: 1A
Voltage: 12V
Switching speed needed: minimum 100kHz

Will be using it in H-bridge config to construct a high frequency DC to AC inverter of 100 kHz

Look at www.onsemi.com
There are many biploars in that range..

I would recommend MOSFETs with a voltage rating of at least 20V and a current rating of at least 3A for that speed requirement. There are many available in that range.

Although you can use a BJT, I'm with Crutschow that the Mosfet is a much better alternative.
Not only from the lower drive losses, but because of the absence from secondary breakdown that plague BJTs.

100kHz is not high speed and there are hundreds of transistors that can conduct only 1A.
Why don't you use an L293 or L298 IC?

Why don't you use an L293 or L298 IC?

Well, it would be great if I can use that coz I've an extra L293 laying around...
Can it be that fast? Like 100kHz? I've worked with that IC before while making a small radio control car for a TECH FEST in our college..
I know it has a huge voltage range and probably a good current handling capacity with low internal capacitance.

But still in my other part of the circuit, a single NPN would be needed with similar frequency response (for making a NOT gate, cant use that big IC in my circuit coz I just need one gate of it). And I doubt that IC can really switch that fast.

A small, fast NPN is a 2N2369.
Any digital-logic IC will work at 100kHz.

a 2N3019 would help? I'll use L293D for H-Bridge... but for that NOT gate?
the voltage and current ratings seems to be fine..
but the switching frequency? I dont know how to get that

https://www.onsemi.com/pub_link/Collateral/2N3019-D.PDF

Thats the data sheet

A 2N3019 is a fairly slow (10µs turn-off) switch.
A 2N2369 or a 2N5769 are both relatively fast.

Your "switching frequency" depends on whether (or how
hard" you will saturate the device along with the working
temperature. A switching transistor may have a datasheet
recovery time spec. A linear one may not bother and all
bets are off. One that does offer a turnoff time spec may
only do so at one test condition, while your load variation
could well put you at different, varying points on the map.
This could just be a minor duty cycle distortion or it could
end up with a transistor that never turns off (if 1/fSW is
shorter than saturation recovery time, you will not leave
saturation before you re-pump the base full of charge).

This is why MOSFETs win anytime you are much above
50kHz and not competing on ultimate current density.

H-bridges care a whole lot about dead times and shoot-
through prevention. A very variable turnoff time which
you want to match-and-offset tightly with a not-so-variable
turnon time, does that sound like a recipe for success or
just a way to solve the surplus transistors problem, one
smoke cloud at a time?

dick_freebird said:

........... does that sound like a recipe for success or
just a way to solve the surplus transistors problem, one
smoke cloud at a time?

Click to expand...

The original poster has not mentioned exactly why he really wants to use a BJT, but your explanation sounds plausible to me.